Field-Effect Transistors on Tetracene Single Crystals

Details Field-Effect Transistors on Tetracene Single Crystals Field-Effect Transistors on Tetracene Single Crystals

2003-07-14

arxiv.org/abs/cond-mat/0307320v2

Physics

Condensed Matter

Materials Science

Accepted by Appl. Phys. Lett, tentatively scheduled for publication in the November 24, 2003 issue

Scientific paper

10.1063/1.1629144

We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of $0.4 \ cm^2/Vs$. The non-monotonous temperature dependence of the mobility, its weak gate voltage dependence, as well as the sharpness of the subthreshold slope confirm the high quality of single-crystal devices. This is due to the fabrication process that does not substantially affect the crystal quality.

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