Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator

Details Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator

2002-10-24

arxiv.org/abs/cond-mat/0210555v1

Physics

Condensed Matter

Strongly Correlated Electrons

3 pages

Scientific paper

10.1063/1.1560869

We report on fabrication and characterization of the organic field effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs exhibit the p-type conductivity with the field effect mobility up to 1 cm^2/Vs and the on/off ratio ~ 10^4. The temperature dependence of the mobility is discussed.

Affiliated with

Also associated with

No associations

Rating

Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-163262