Field-effect modulation of conductance in VO2 nanobeam transistors with HfO2 as the gate dielectric

Details Field-effect modulation of conductance in VO2 nanobeam transistors with HfO2 as the gate dielectric Field-effect modulation of conductance in VO2 nanobeam transistors with HfO2 as the gate dielectric

2011-07-26

arxiv.org/abs/1107.5291v1

Appl. Phys. Lett. 99, 062114 (2011)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 3 figures

Scientific paper

10.1063/1.3624896

We study field-effect transistors realized from VO2 nanobeams with HfO2 as the gate dielectric. When heated up from low to high temperatures, VO2 undergoes an insulator-to-metal transition. We observe a change in conductance (~ 6 percent) of our devices induced by gate voltage when the system is in the insulating phase. The response is reversible and hysteretic, and the area of hysteresis loop becomes larger as the rate of gate sweep is slowed down. A phase lag exists between the response of the conductance and the gate voltage. This indicates the existence of a memory of the system and we discuss its possible origins.

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