Field-Effect Devices Utilizing LaAlO$_3$-SrTiO$_3$ Interfaces

Details Field-Effect Devices Utilizing LaAlO$_3$-SrTiO$_3$ Interfaces Field-Effect Devices Utilizing LaAlO$_3$-SrTiO$_3$ Interfaces

2012-01-28

arxiv.org/abs/1201.5953v1

Physics

Condensed Matter

Materials Science

to be published in Applied Physics Letters

Scientific paper

Using LaAlO$_3$-SrTiO$_3$ bilayers, we have fabricated field-effect devices that utilize the two-dimensional electron liquid generated at the bilayers' {\textit n}-type interfaces as drain-source channels and the LaAlO$_3$ layers as gate dielectrics. With gate voltages well below 1\,V, the devices are characterized by voltage gain and current gain. The devices were operated at temperatures up to 100\,{\deg}C.

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