Few Graphene layer/Carbon-Nanotube composite Grown at CMOS-compatible Temperature

Details Few Graphene layer/Carbon-Nanotube composite Grown at CMOS-compatible Temperature Few Graphene layer/Carbon-Nanotube composite Grown at CMOS-compatible Temperature

2011-01-25

arxiv.org/abs/1101.4799v1

Applied Physics Letters 98 (2011) 123103

Physics

Condensed Matter

Materials Science

4 pages, 4 figures

Scientific paper

10.1063/1.3569142

We investigate the growth of the recently demonstrated composite material composed of vertically aligned carbon nanotubes capped by few graphene layers. We show that the carbon nanotubes grow epitaxially under the few graphene layers. By using a catalyst and gaseous carbon precursor different from those used originally we establish that such unconventional growth mode is not specific to a precise choice of catalyst-precursor couple. Furthermore, the composite can be grown using catalyst and temperatures compatible with CMOS processing (T < 450\degree C).

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