Few-electron quantum dots in III-V ternary alloys: role of fluctuations

Details Few-electron quantum dots in III-V ternary alloys: role of fluctuations Few-electron quantum dots in III-V ternary alloys: role of fluctuations

2010-07-27

arxiv.org/abs/1007.4849v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3.3 pages, 3 figures. Added two new subfigures, new references, and improved the text

Scientific paper

We study experimentally the electron transport properties of gated quantum dots formed in InGaAs/InP and InAsP/InP quantum well structures grown by chemical-beam epitaxy. For the case of the InGaAs quantum well, quantum dots form directly underneath narrow gate electrodes due to potential fluctuations. We measure the Coulomb-blockade diamonds in the few-electron regime of a single quantum dot and observe photon-assisted tunneling peaks under microwave irradiation. A singlet-triplet transition at high magnetic field and Coulomb-blockade effects in the quantum Hall regime are also observed. For the InAsP quantum well, an incidental triple quantum dot forms also due to potential fluctuations within a single dot layout. Tunable quadruple points are observed via transport measurements.

Affiliated with

Also associated with

No associations

Rating

Few-electron quantum dots in III-V ternary alloys: role of fluctuations does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Few-electron quantum dots in III-V ternary alloys: role of fluctuations, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Few-electron quantum dots in III-V ternary alloys: role of fluctuations will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-73385