Ferromagnetism in Diluted Magnetic Semiconductor Heterojunction Systems

Details Ferromagnetism in Diluted Magnetic Semiconductor Heterojunction Systems Ferromagnetism in Diluted Magnetic Semiconductor Heterojunction Systems

2002-03-05

arxiv.org/abs/cond-mat/0203080v1

Semicond. Sci. Technol. 17, 393 (2002)

Physics

Condensed Matter

Materials Science

12 pages, 7 figures, review, special issue of Semicon. Sci. Technol. on semiconductor spintronics

Scientific paper

10.1088/0268-1242/17/4/311

Diluted magnetic semiconductors (DMSs), in which magnetic elements are substituted for a small fraction of host elements in a semiconductor lattice, can become ferromagnetic when doped. In this article we discuss the physics of DMS ferromagnetism in systems with semiconductor heterojunctions. We focus on the mechanism that cause magnetic and magnetoresistive properties to depend on doping profiles, defect distributions, gate voltage, and other system parameters that can in principle be engineered to yield desired results.

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