Ferromagnetism in 2p Light Element-Doped II-oxide and III-nitride Semiconductors

Details Ferromagnetism in 2p Light Element-Doped II-oxide and III-nitride Semiconductors Ferromagnetism in 2p Light Element-Doped II-oxide and III-nitride Semiconductors

2007-09-13

arxiv.org/abs/0709.2059v1

Physics

Condensed Matter

Materials Science

Scientific paper

II-oxide and III-nitride semiconductors doped by nonmagnetic 2p light elements are investigated as potential dilute magnetic semiconductors (DMS). Based on our first-principle calculations, nitrogen doped ZnO, carbon doped ZnO, and carbon doped AlN are predicted to be ferromagnetic. The ferromagnetism of such DMS materials can be attributed to a p-d exchange-like p-p coupling interaction which is derived from the similar symmetry and wave function between the impurity (p-like t_2) and valence (p) states. We also propose a co-doping mechanism, using beryllium and nitrogen as dopants in ZnO, to enhance the ferromagnetic coupling and to increase the solubility and activity.

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