Ferromagnetism and spin polarized charge carriers in In$_{2}$O$_{3}$ thin films

Details Ferromagnetism and spin polarized charge carriers in In$_{2}$O$_{3}$ thin films Ferromagnetism and spin polarized charge carriers in In$_{2}$O$_{3}$ thin films

2008-08-07

arxiv.org/abs/0808.1123v1

Physics

Condensed Matter

Materials Science

5 pages 5 figures

Scientific paper

We present evidence for spin polarized charge carriers in In$_2$O$_3$ films. Both In$_2$O$_3$ and Cr doped In$_2$O$_3$ films exhibit room temperature ferromagnetism after vacuum annealing, with a saturation moment of approximately 0.5 emu/cm$^3$. We used Point Contact Andreev Reflection measurements to directly determine the spin polarization, which was found to be approximately 50$\pm$5% for both compositions. These results are consistent with suggestions that the ferromagnetism observed in certain oxide semiconductors may be carrier mediated.

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