Ferromagnetic imprinting of spin polarization in a semiconductor

Details Ferromagnetic imprinting of spin polarization in a semiconductor Ferromagnetic imprinting of spin polarization in a semiconductor

2002-03-13

arxiv.org/abs/cond-mat/0203285v1

Phys. Rev. Lett. 89, 156601 (2002). (with minor revision)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages with 2 figures

Scientific paper

10.1103/PhysRevLett.89.156601

We present a theory of the imprinting of the electron spin coherence and population in an n-doped semiconductor which forms a junction with a ferromagnet. The reflection of non-equilibrium semiconductor electrons at the interface provides a mechanism to manipulate the spin polarization vector. In the case of unpolarized excitation, this ballistic effect produces spontaneous electron spin coherence and nuclear polarization in the semiconductor, as recently observed by time-resolved Faraday rotation experiments. We investigate the dependence of the spin reflection on the Schottky barrier height and the doping concentration in the semiconductor and suggest control mechanisms for possible device applications.

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