Ferroelectricity and structure of BaTiO3 grown on YBa2Cu3O7-d thin films

Details Ferroelectricity and structure of BaTiO3 grown on YBa2Cu3O7-d thin films Ferroelectricity and structure of BaTiO3 grown on YBa2Cu3O7-d thin films

2000-02-15

arxiv.org/abs/cond-mat/0002216v1

Physics

Condensed Matter

Materials Science

12 pages and 9 figures

Scientific paper

10.1007/s100510051056

We have investigated the crystal structure and the ferroelectric properties of BaTiO3 thin films with YBa2Cu3O7-d as the bottom and Au as the top electrode. Epitaxial heterostructures of YBa2Cu3O7-d and BaTiO3 were prepared by dc and rf sputtering, respectively. The crystal structure of the films was characterised by x-ray diffraction. The ferroelectric behaviour of the BaTiO3 films was confirmed by hysteresis loop measurements using a Sawyer Tower circuit. We obtain a coercive field of 30 kV/cm and a remanent polarisation of 1.25 \muC/cm. At sub-switching fields the capacitance of the films obeys a relation analogous to the Rayleigh law. This behaviour indicates an interaction of domain walls with randomly distributed pinning centres. At a field of 5 MV/m we calculate 3% contribution of irreversible domain wall motion to the total dielectric constant.

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