Ferroelectric YMnO3 films deposited on n-type Si (111) substrates

Details Ferroelectric YMnO3 films deposited on n-type Si (111) substrates Ferroelectric YMnO3 films deposited on n-type Si (111) substrates

2003-01-16

arxiv.org/abs/cond-mat/0301286v1

Physics

Condensed Matter

Materials Science

10 pages, 1 table, 4 figures, first submitted to Appl. Phys. Letts. on 28th Aug 2002. Resubmitted to J. Phys. D; applied physi

Scientific paper

YMnO3 thin films have been grown on n - type Si substrates by nebulized spray pyrolysis in the Metal - Ferroelectric - Semiconductor (MFS) configuration. The C-V characteristics of the film in MFS structure exhibit hysteretic behavior consistent with the polarization charge switching direction, with the memory window decreasing with increase in temperature. The density of interface states decreases with the increase in the annealing temperature. Mapping of the silicon energy band gap with the interface states has been carried out. The leakage current measured in the accumulation region, is lower in well-crystallized thin films and obeys a space- charge limited conduction mechanism.

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