Fermionic Chern-Simons Theory of SU(4) Fractional Quantum Hall Effect

Details Fermionic Chern-Simons Theory of SU(4) Fractional Quantum Hall Effect Fermionic Chern-Simons Theory of SU(4) Fractional Quantum Hall Effect

2011-05-13

arxiv.org/abs/1105.2828v1

Physics

Condensed Matter

Strongly Correlated Electrons

v1; 1 Fig, 2 Tables, 7+ pages

Scientific paper

We develop a Fermionic Chern-Simons (CS) theory for the fractional quantum Hall effect in monolayer graphene with SU(4) symmetry, arising from the spin and the valley degrees of freedom, which involves four distinct CS gauge fields. We choose the corresponding elements of the CS coupling matrix such that an even number of spin and valley quantum number dependent flux quanta is attached to all electrons and that any electron with a given spin and valley quantum number sees an integer number of flux attached to other electrons with different (spin and valley) quantum numbers. Using this CS matrix, we obtain a list of possible fractional quantum Hall states that might occur in graphene and propose wavefunctions for those states. Our analysis also applies to fractional quantum Hall states of both bilayer quantum Hall systems without spin polarization and bilayer spin polarized graphene.

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