Fermi Surface Variation of Ce 4f-electrons in Hybridization Controlled Heavy-Fermion Systems

Details Fermi Surface Variation of Ce 4f-electrons in Hybridization Controlled Heavy-Fermion Systems Fermi Surface Variation of Ce 4f-electrons in Hybridization Controlled Heavy-Fermion Systems

2009-04-07

arxiv.org/abs/0904.1008v1

Physics

Condensed Matter

Strongly Correlated Electrons

9 pages, 4 figures, submitted to Phys. Rev. Lett

Scientific paper

Ce 3$d-4f$ resonant angle-resolved photoemission measurements on CeCoGe$_{1.2}$Si$_{0.8}$ and CeCoSi$_{2}$ have been performed to understand the Fermi surface topology as a function of hybridization strength between Ce 4$f$- and conduction electrons in heavy-fermion systems. We directly observe that the hole-like Ce 4$f$-Fermi surfaces of CeCoSi$_{2}$ is smaller than that of CeCoGe$_{1.2}$Si$_{0.8}$, indicating the evolution of the Ce 4$f$-Fermi surface with the increase of the hybridization strength. Moreover, it is suggestive that the variation of Ce 4$f$-Fermi surface should be ascribed to the increase of the density of state in coherent part near the Fermi level as the hybridization strength increases.

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