Fermi-edge Singularity in II-VI Semiconductor Resonant Tunneling Structures

Details Fermi-edge Singularity in II-VI Semiconductor Resonant Tunneling Structures Fermi-edge Singularity in II-VI Semiconductor Resonant Tunneling Structures

2009-01-12

arxiv.org/abs/0901.1568v1

Appl. Phys. Lett. 93, 182104 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.3009284

We report on the observation of Fermi edge enhanced resonant tunneling transport in a II-VI semiconductor heterostructure. The resonant transport through a self assembled CdSe quantum dot survives up to 45 K and probes a disordered two dimensional (2D) like emitter which dominates the magnetic field dependence of the transport. An enhancement of the tunnel current through many particle effects is clearly observable, even without an applied magnetic field. Additional fine structure in the tunneling current suggests that while conventional Fermi edge singularity theory successfull reproduces the general features of the increased transmission, it is not adequate to describe all details of the current enhancement.

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