Fe implanted ferromagnetic ZnO

Details Fe implanted ferromagnetic ZnO Fe implanted ferromagnetic ZnO

2005-12-13

arxiv.org/abs/cond-mat/0512267v1

Appl. Phys. Lett. 88, 052508 (2006)

Physics

Condensed Matter

Materials Science

13 pages, 2 figs, to be published in Appl. Phys. Lett

Scientific paper

10.1063/1.2169912

Room-temperature ferromagnetism has been induced within ZnO single crystals by implant-doping with Fe ions. For an implantation temperature of 620 K and an ion fluence of 4x10^16 cm^-2, very tiny Fe particles, formed inside the host matrix, are responsible for the ferromagnetic properties. They were identified using synchrotron X-ray diffraction and Moessbauer spectroscopy. On the other hand, Fe ions implanted at a temperature of 253 K and an ion fluence of 4x10^15 cm^-2 are incorporated into the host matrix and develop a room temperature diluted magnetic semiconductor (DMS).

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