Fast tunnel rates in Si/SiGe one-electron single and double quantum dots

Details Fast tunnel rates in Si/SiGe one-electron single and double quantum dots Fast tunnel rates in Si/SiGe one-electron single and double quantum dots

2010-03-03

arxiv.org/abs/1003.0928v1

Appl. Phys. Lett. 96, 183104 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, double column, 3 figures

Scientific paper

10.1063/1.3425892

We report the fabrication and measurement of one-electron single and double quantum dots with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-electron dots can be challenging, in part due to the large electron effective mass in Si. Using charge sensing, we identify signatures of tunnel rates in and out of the dot that are fast or slow compared to the measurement rate. Such signatures provide a means to calibrate the absolute electron number and verify single electron occupation. Pulsed gate voltage measurements are used to validate the approach.

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