Fast preparation of single hole spin in InAs/GaAs quantum dot in Voigt geometry magnetic field

Details Fast preparation of single hole spin in InAs/GaAs quantum dot in Voigt geometry magnetic field Fast preparation of single hole spin in InAs/GaAs quantum dot in Voigt geometry magnetic field

2012-02-27

arxiv.org/abs/1202.5943v2

Phys. Rev. B 85 115310 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 10 figs, published PRB 85 155310 (2012)

Scientific paper

10.1103/PhysRevB.85.155310 10.11

The preparation of a coherent heavy-hole spin via ionization of a spin-polarized electron-hole pair in an InAs/GaAs quantum dot in a Voigt geometry magnetic field is investigated. For a dot with a 17 ueV bright-exciton fine-structure splitting, the fidelity of the spin preparation is limited to 0.75, with optimum preparation occurring when the effective fine-structure of the bright-exciton matches the in-plane hole Zeeman energy. In principle, higher fidelities can be achieved by minimizing the bright-exciton fine-structure splitting.

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