Fast and slow edges in bilayer graphene nanoribbons: Tuning the transition from band- to Mott-insulator

Details Fast and slow edges in bilayer graphene nanoribbons: Tuning the transition from band- to Mott-insulator Fast and slow edges in bilayer graphene nanoribbons: Tuning the transition from band- to Mott-insulator

2010-01-26

arxiv.org/abs/1001.4735v2

Phys. Rev. B 81, 235422 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 8 figures. Version accepted for publication in PRB

Scientific paper

10.1103/PhysRevB.81.235422

We show that gated bilayer graphene zigzag ribbons possess a fast and a slow edge, characterized by edge state velocities that differ due to non-negligible next-nearest-neighbor hopping elements. By applying bosonization and renormalization group methods, we find that the slow edge can acquire a sizable interaction-induced gap, which is tunable via an external gate voltage V_{g}. In contrast to the gate-induced gap in the bulk, the interaction-induced gap depends non-monotonously on the on-site potential V.

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