Far-infrared absorption in single-electron transistors: Theoretical results and experiment proposal

Details Far-infrared absorption in single-electron transistors: Theoretical results and experiment proposal Far-infrared absorption in single-electron transistors: Theoretical results and experiment proposal

2009-05-08

arxiv.org/abs/0905.1212v2

Phys. Rev. B 81, 125322 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.81.125322

We present theoretical results on far-infrared (FIR) absorption of
single-electron transistors. Based on them, we propose and explain how to
conduct combined FIR--dc-transport experiments to determine the charging energy
and other relevant parameters, without measuring FIR intensities.

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