Fano interference effect on the transition spectrum of single electron transistors

Details Fano interference effect on the transition spectrum of single electron transistors Fano interference effect on the transition spectrum of single electron transistors

2005-11-20

arxiv.org/abs/cond-mat/0511491v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 5 figures

Scientific paper

10.1103/PhysRevB.73.155331

We theoretically study the intraband transition spectrum of single electron transistors (SETs) composed of individual self-assembled quantum dots. The polarization of SETs is obtained by using the nonequilibrium Green's function technique and the Anderson model with three energy levels. Owing to nonradiative coupling between two excited states through the continuum of electrodes, the Fano interference effect significantly influences the peak position and intensity of infrared wavelength single-photon spectrum.

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