Faceted anomalous scaling in the epitaxial growth of semiconductor films

Details Faceted anomalous scaling in the epitaxial growth of semiconductor films Faceted anomalous scaling in the epitaxial growth of semiconductor films

2011-01-07

arxiv.org/abs/1101.1493v4

Europhysics Letters 94 68002 (2011)

Physics

Condensed Matter

Statistical Mechanics

to appear in Europhysics Letters

Scientific paper

10.1209/0295-5075/94/68002

We apply the generic dynamical scaling theory (GDST) to the surfaces of CdTe polycrystalline films grown in glass substrates. The analysed data were obtained with a stylus profiler with an estimated resolution lateral resolution of $l_c=0.3 \mu$m. Both real two-point correlation function and power spectrum analyses were done. We found that the GDST applied to the surface power spectra foresees faceted morphology in contrast with the self-affine surface indicated by the local roughness exponent found via the height-height correlation function. This inconsistency is explained in terms of convolution effects resulting from the finite size of the probe tip used to scan the surfaces. High resolution AFM images corroborates the predictions of GDST.

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