Fabrication of Graphene p-n-p Junctions with Contactless Top Gates

Details Fabrication of Graphene p-n-p Junctions with Contactless Top Gates Fabrication of Graphene p-n-p Junctions with Contactless Top Gates

2008-04-16

arxiv.org/abs/0804.2513v2

Appl. Phys. Lett., 92, 203103 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.2928234

We developed a multi-level lithography process to fabricate graphene p-n-p junctions with the novel geometry of contactless, suspended top gates. This fabrication procedure minimizes damage or doping to the single atomic layer, which is only exposed to conventional resists and developers. The process does not require special equipment for depositing gate dielectrics or releasing sacrificial layers, and is compatible with annealing procedures that improve device mobility. Using this technique, we fabricate graphene devices with suspended local top gates, where the creation of high quality graphene p-n-p junctions is confirmed by transport data at zero and high magnetic fields.

Affiliated with

Also associated with

No associations

Rating

Fabrication of Graphene p-n-p Junctions with Contactless Top Gates does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Fabrication of Graphene p-n-p Junctions with Contactless Top Gates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of Graphene p-n-p Junctions with Contactless Top Gates will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-606959