Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam Patterning

Details Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam Patterning Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam Patterning

2004-08-02

arxiv.org/abs/cond-mat/0408046v1

Physics

Condensed Matter

Materials Science

To appear in the proceedings of the 27th International Conference on the Physics of Semiconductors (ICPS-27, Flagstaff, AZ, Ju

Scientific paper

10.1063/1.1994074

A novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaNxAs1-x film by amorphization through ion implantation followed by regrowth upon rapid thermal annealing (RTA). Amorphization may be achieved with a focused ion beam (FIB), which is used to implant Ga ions in patterned lines such that annealing produces GaAs regions within a GaNxAs1-x film. The profiles of these amorphized lines are dependent upon the dose implanted, and the film reaches a damage threshold during RTA due to excess Ga. By altering the FIB implantation pattern, quantum dots or wires may be fabricated.

Affiliated with

Also associated with

No associations

Rating

Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam Patterning does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam Patterning, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam Patterning will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-306974