Fabrication and Room-Temperature Single-Charging Behavior of Self-Aligned Single-Dot Memory Devices

Details Fabrication and Room-Temperature Single-Charging Behavior of Self-Aligned Single-Dot Memory Devices Fabrication and Room-Temperature Single-Charging Behavior of Self-Aligned Single-Dot Memory Devices

2011-09-13

arxiv.org/abs/1109.2921v1

IEEE Transaction on Nanotechnology 5, 6 (2006) p. 649

Physics

Condensed Matter

Materials Science

Scientific paper

10.1109/TNANO.2006.883481

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial application.

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