Fabrication and characterization of pseudo-spin-MOSFET

Details Fabrication and characterization of pseudo-spin-MOSFET Fabrication and characterization of pseudo-spin-MOSFET

2009-10-28

arxiv.org/abs/0910.5238v1

Physics

Condensed Matter

Materials Science

Presented at Intl. Conf. on Silicon Nano Devices in 2030, Tokyo, October 13-14, 2009, pp. 148-149

Scientific paper

Recently spin-transistors receive considerable attention as a highly-functional building block of future integrated circuits. In order to realize spin-transistors, it is essential that technology of efficient spin injection/detection for semiconductor channel is established. However, this is not so easy challenge owing to ferromagnet/semiconductor-interface-related several problems. In this paper, we demonstrate pseudo-spin-MOSFET (PS-MOSFET) architecture that is a new circuit approach using an ordinary MOSFET and magnetic tunnel junction (MTJ) to reproduce the functions of spin transistors.

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