Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2005-04-04
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
3 pages, 4 figs
Scientific paper
10.1063/1.2136436
A new fabrication technique is used to produce quantum dots with read-out channels in silicon/silicon-germanium two-dimensional electron gases. The technique utilizes Schottky gates, placed on the sides of a shallow etched quantum dot, to control the electronic transport process. An adjacent quantum point contact gate is integrated to the side gates to define a read-out channel and thus allow for noninvasive detection of the electronic occupation of the quantum dot. Reproducible and stable Coulomb oscillations and the corresponding jumps in the read-out channel resistance are observed at low temperatures. The fabricated dot combined with the read-out channel represent a step towards the spin-based quantum bit in Si/SiGe heterostructures.
Croke Edward T.
Jiang Hong Wen
Sakr Mohammed R.
Yablonovitch Eli
No associations
LandOfFree
Fabrication and Characterization of Electrostatic Quantum Dots in a Si/SiGe 2D Electron Gas, Including an Integrated Read-out Channel does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Fabrication and Characterization of Electrostatic Quantum Dots in a Si/SiGe 2D Electron Gas, Including an Integrated Read-out Channel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication and Characterization of Electrostatic Quantum Dots in a Si/SiGe 2D Electron Gas, Including an Integrated Read-out Channel will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-279133