Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

Details Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

2012-04-03

arxiv.org/abs/1204.0827v1

Applied Physics Letters 100, 052101 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

related papers at http://www.phys.unsw.edu.au/qed

Scientific paper

10.1063/1.3673837

We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons ($\mu_\textrm{peak}=4\times10^6\textrm{cm}^2/\textrm{Vs}$) and holes ($\mu_\textrm{peak}=0.8\times10^6\textrm{cm}^2/\textrm{Vs}$) in the same conduction channel with nominally identical disorder potentials. We find significant discrepancies between electron and hole scattering, with the hole mobility being considerably lower than expected from simple theory.

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