$f^{-γ}$ Current Fluctuations in Organic Semiconductors: Evidence for Percolation

Details $f^{-γ}$ Current Fluctuations in Organic Semiconductors: Evidence for Percolation $f^{-γ}$ Current Fluctuations in Organic Semiconductors: Evidence for Percolation

2006-01-18

arxiv.org/abs/cond-mat/0601418v1

The European Physical Journal B 50 1-2 (2006) 77-81

Physics

Condensed Matter

Disordered Systems and Neural Networks

11 pages, 2 figures, to appear on European Physical Journal B

Scientific paper

10.1140/epjb/e2006-00146-5

The $f^{-\gamma}$ sloped current noise power spectra, observed in organic semiconductors, have been interpreted within a {\em variable range hopping} mechanism of the fluctuations. The relative current noise power spectral density ${\cal S}(f)=S_I(f)/I^2$ exhibits a maximum at the {\em trap-filling transition} between the {\em ohmic} and the {\em space-charge-limited-current} regime [Phys. Rev. Lett., {\bf 95}, 236601, 2005]. Here, we discuss the electronic conditions determining the crossover from ohmic to space-charge-limited transport. These arguments shed further light on the need to adopt a {\em percolative} fluctuation picture to account for the competition between insulating and conductive phases coexisting at the {\em transition}, where small changes in the external bias lead to dramatic effects in the fluctuations.

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