Extraordinary Magnetoresistance in Hybrid Semiconductor-Metal Systems

Details Extraordinary Magnetoresistance in Hybrid Semiconductor-Metal Systems Extraordinary Magnetoresistance in Hybrid Semiconductor-Metal Systems

2010-07-30

arxiv.org/abs/1007.5452v1

International Journal of Modern Physics B (IJMPB), Volume: 23, Issues: 20-21(2009) pp. 4158-4169

Physics

Condensed Matter

Materials Science

12 Pages, 5 Figures

Scientific paper

10.1142/S0217979209063341

We show that extraordinary magnetoresistance (EMR) arises in systems consisting of two components; a semiconducting ring with a metallic inclusion embedded. The im- portant aspect of this discovery is that the system must have a quasi-two-dimensional character. Using the same materials and geometries for the samples as in experiments by Solin et al.[1;2], we show that such systems indeed exhibit a huge magnetoresistance. The magnetoresistance arises due to the switching of electrical current paths passing through the metallic inclusion. Diagrams illustrating the flow of the current density within the samples are utilised in discussion of the mechanism responsible for the magnetoresistance effect. Extensions are then suggested which may be applicable to the silver chalcogenides. Our theory offers an excellent description and explanation of experiments where a huge magnetoresistance has been discovered[2;3].

Affiliated with

Also associated with

No associations

Rating

Extraordinary Magnetoresistance in Hybrid Semiconductor-Metal Systems does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Extraordinary Magnetoresistance in Hybrid Semiconductor-Metal Systems, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Extraordinary Magnetoresistance in Hybrid Semiconductor-Metal Systems will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-700764