Extraction of electric field in heavily irradiated silicon pixel sensors

Details Extraction of electric field in heavily irradiated silicon pixel sensors Extraction of electric field in heavily irradiated silicon pixel sensors

2004-12-06

arxiv.org/abs/physics/0412036v2

Nucl.Instrum.Meth.A560:112-117,2006

Physics

Instrumentation and Detectors

6 pages, 11 figures, presented at the 13th International Workshop on Vertex Detectors for High Energy Physics, September 13-18

Scientific paper

10.1016/j.nima.2005.11.247

A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1E15 neq/cm2 sensors.

Affiliated with

Also associated with

No associations

Rating

Extraction of electric field in heavily irradiated silicon pixel sensors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Extraction of electric field in heavily irradiated silicon pixel sensors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Extraction of electric field in heavily irradiated silicon pixel sensors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-41252