Extracting contact effects in organic field-effect transistors

Details Extracting contact effects in organic field-effect transistors Extracting contact effects in organic field-effect transistors

2005-05-03

arxiv.org/abs/cond-mat/0505081v1

Proc. IEEE 93, 1306-1311 (2005).

Physics

Condensed Matter

Other Condensed Matter

7 pages, 8 figures. To appear in July 2005 Proc. of the IEEE, Special Issue on Flexible Electronics

Scientific paper

10.1109/JPROC.2005.850301

Contact resistances between organic semiconductors and metal electrodes have been shown to play a dominant role in electronic charge injection properties of organic field-effect transistors. These effects are more prevalent in short channel length devices and therefore should not be ignored when examining intrinsic properties such as the mobility and its dependence on temperature or gate voltage. Here we outline a general procedure to extract contact current-voltage characteristics and the true channel mobility from the transport characteristics in bottom contact poly(3-hexylthiophene) field-effect transistors, for both Ohmic and nonlinear charge injection, over a broad range of temperatures and gate voltages. Distinguishing between contact and channel contributions in bottom contact OFETs is an important step toward improved understanding and modeling of these devices.

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