External field control of donor electron exchange at the Si/SiO2 interface

Details External field control of donor electron exchange at the Si/SiO2 interface External field control of donor electron exchange at the Si/SiO2 interface

2006-12-04

arxiv.org/abs/cond-mat/0612093v2

Phys. Rev. B 75, 125311 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

11 pages, 15 figures. Changes in Eq. 24 plus minor typos

Scientific paper

10.1103/PhysRevB.75.125311

We analyze several important issues for the single- and two-qubit operations in Si quantum computer architectures involving P donors close to a SiO2 interface. For a single donor, we investigate the donor-bound electron manipulation (i.e. 1-qubit operation) between the donor and the interface by electric and magnetic fields. We establish conditions to keep a donor-bound state at the interface in the absence of local surface gates, and estimate the maximum planar density of donors allowed to avoid the formation of a 2-dimensional electron gas at the interface. We also calculate the times involved in single electron shuttling between the donor and the interface. For a donor pair, we find that under certain conditions the exchange coupling (i.e. 2-qubit operation) between the respective electron pair at the interface may be of the same order of magnitude as the coupling in GaAs-based two-electron double quantum dots where coherent spin manipulation and control has been recently demonstrated (for example for donors ~10 nm below the interface and \~40 nm apart, J~10^{-4} meV), opening the perspective for similar experiments to be performed in Si.

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