External Control of a Metal-Insulator Transition in GaMnAs Wires

Details External Control of a Metal-Insulator Transition in GaMnAs Wires External Control of a Metal-Insulator Transition in GaMnAs Wires

2007-09-24

arxiv.org/abs/0709.3847v2

Phys. Rev. Lett. 101, 016801 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Major revised final version

Scientific paper

10.1103/PhysRevLett.101.016801

Quantum transport in disordered ferromagnetic (III,Mn)V semiconductors is studied theoretically. Mesoscopic wires exhibit an Anderson disorder-induced metal-insulator transition that can be controlled by a weak external magnetic field. This metal-insulator transition should also occur in other materials with large anisotropic magneto resistance effects. The transition can be useful for studies of zero-temperature quantum critical phase transitions and fundamental material properties.

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