Exploiting Locally Imposed Anisotropies in (Ga,Mn)As: a Non-volatile Memory Device

Details Exploiting Locally Imposed Anisotropies in (Ga,Mn)As: a Non-volatile Memory Device Exploiting Locally Imposed Anisotropies in (Ga,Mn)As: a Non-volatile Memory Device

2007-01-19

arxiv.org/abs/cond-mat/0701478v1

Nature Physics Volume: 3 Issue: 8 Pages: 573-578 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in which we study transport through a constriction separating two regions whose magnetization direction differs by 90 degrees. We find that the resistance of the constriction depends on the flow of the magnetic field lines in the constriction region and demonstrate that such a structure constitutes a non-volatile memory device.

Affiliated with

Also associated with

No associations

Rating

Exploiting Locally Imposed Anisotropies in (Ga,Mn)As: a Non-volatile Memory Device does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Exploiting Locally Imposed Anisotropies in (Ga,Mn)As: a Non-volatile Memory Device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Exploiting Locally Imposed Anisotropies in (Ga,Mn)As: a Non-volatile Memory Device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-70437