Explicit drain current, charge and capacitance model of graphene field-effect transistors

Details Explicit drain current, charge and capacitance model of graphene field-effect transistors Explicit drain current, charge and capacitance model of graphene field-effect transistors

2011-05-13

arxiv.org/abs/1105.2734v1

IEEE Transactions on Electron Devices, vol. 58, issue 12, pp. 4377 - 4383 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

18 pages, 5 figures

Scientific paper

10.1109/TED.2011.2168960

I present a compact physics-based model of the drain current, charge and capacitance of graphene field-effect transistors, of relevance for exploration of DC, AC and transient behavior of graphene based circuits. The physical framework is a field-effect model and drift-diffusion carrier transport incorporating saturation velocity effects. First, an explicit model has been derived for the drain current. Using it as a basis, explicit closed-form expressions for the charge and capacitances based on the Ward-Dutton partition scheme, covering continuosly all operation regions. The model is of special interest for analog and radio-frequency applications where bandgap engineering of graphene could be not needed.

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