Experimental realization of single electron tunneling diode based on vertical graphene two-barrier junction

Details Experimental realization of single electron tunneling diode based on vertical graphene two-barrier junction Experimental realization of single electron tunneling diode based on vertical graphene two-barrier junction

2012-04-25

arxiv.org/abs/1204.5539v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

Usually, graphene is used in its horizontal directions to design novel concept devices. Here, we report a single electron tunneling diode based on quantum tunneling through a vertical graphene two-barrier junction. The junction is formed by positioning a scanning tunnelling microscopy (STM) tip above a graphene nanoribbon that was deposited on a graphite surface. Because of the asymmetry of the two-barrier junction, the electrons can unidirectional transfer from the tip to the graphene nanoribbon but not from the graphene to the tip. This result opens intriguing opportunities for designing new type of graphene transistors in its vertical direction.

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