Experimental realization of a silicon spin field-effect transistor

Details Experimental realization of a silicon spin field-effect transistor Experimental realization of a silicon spin field-effect transistor

2007-05-29

arxiv.org/abs/0705.4260v1

Appl. Phys. Lett. 91, 072501 (2007)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.2770656

A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin direction at the spin detector and hence the output collector current, this comprises a spin field-effect transistor. An improved hot-electron spin injector providing ~115% magnetocurrent, corresponding to at least ~38% electron current spin polarization after transport through 10 microns undoped single-crystal silicon, is used for maximum current modulation.

Affiliated with

Also associated with

No associations

Rating

Experimental realization of a silicon spin field-effect transistor does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Experimental realization of a silicon spin field-effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Experimental realization of a silicon spin field-effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-499646