Experimental evidence of a metal-insulator transition in a half-filled Landau level

Details Experimental evidence of a metal-insulator transition in a half-filled Landau level Experimental evidence of a metal-insulator transition in a half-filled Landau level

1997-01-09

arxiv.org/abs/cond-mat/9701061v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

To be published in Solid State Communications. 4 figures

Scientific paper

10.1016/S1386-9477(98)00018-6

We have measured the low-temperature transport properties of a high-mobility front-gated GaAs/Al_{0.33}Ga_{0.67}As heterostructure. By changing the applied gate voltage, we can vary the amount of disorder within the system. At a Landau level filling factor $\nu =1/2$, where the system can be described by the composite fermion picture, we observe a crossover from metallic to insulating behaviour as the disorder is increased. Experimental results and theoretical prediction are compared.

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