Physics – Condensed Matter – Materials Science
Scientific paper
2010-09-02
Appl. Phys. Lett. 97, 172112 (2010)
Physics
Condensed Matter
Materials Science
11 pages, 4 figures
Scientific paper
10.1063/1.3507898
Thermopower (S) for anatase TiO2 epitaxial films (n3D: 1E17-1E21 /cm3) and the gate voltage (Vg) dependence of S for thin film transistors (TFTs) based on TiO2 films were investigated to clarify the electronic density of states (DOS) around the conduction band bottom. The slope of the |S|-log n3D plots was -20 {\mu}V/K, which is an order magnitude smaller than that of semiconductors (-198 {\mu}V/K), and the |S| values for the TFTs increased with Vg in the low Vg region, suggesting that the extra tail states are hybridized with the original conduction band bottom.
Ikuhara Yuichi
Kato Takeharu
Koumoto Kunihito
Nagao Yuki
Ohta Hiromichi
No associations
LandOfFree
Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-375926