Exclusion of quantum coherence as the origin of the 2D metallic state in high-mobility silicon inversion layers

Details Exclusion of quantum coherence as the origin of the 2D metallic state in high-mobility silicon inversion layers Exclusion of quantum coherence as the origin of the 2D metallic state in high-mobility silicon inversion layers

2000-07-13

arxiv.org/abs/cond-mat/0007230v3

Phys. Rev. Lett. 87, 096802 (2001)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figs, LaTeX; new title, stronger conclusions

Scientific paper

10.1103/PhysRevLett.87.096802

The temperature and density dependence of the phase coherence time $\tau_\phi$ in high-mobility silicon inversion layers was determined from the magnetoresistivity due to weak localization. The upper temperature limit for single-electron quantum interference effects was delineated by comparing $\tau_\phi$ with the momentum relaxation time $\tau$. A comparison between the density dependence of the borders for quantum interference effects and the strong resistivity drop reveals that theses effects are not related to each other. As the strong resistivity drop occurs in the Drude regime, the apparent metallic behavior can not be caused by quantum coherent effects.

Affiliated with

Also associated with

No associations

Rating

Exclusion of quantum coherence as the origin of the 2D metallic state in high-mobility silicon inversion layers does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Exclusion of quantum coherence as the origin of the 2D metallic state in high-mobility silicon inversion layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Exclusion of quantum coherence as the origin of the 2D metallic state in high-mobility silicon inversion layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-415490