Exciton Regeneration at Polymeric Semiconductor Heterojunctions

Details Exciton Regeneration at Polymeric Semiconductor Heterojunctions Exciton Regeneration at Polymeric Semiconductor Heterojunctions

2004-04-08

arxiv.org/abs/cond-mat/0404209v1

Physics

Condensed Matter

Soft Condensed Matter

10 pages, 4 figures. Manuscript in press in Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.92.247402

Control of the band-edge offsets at heterojunctions between organic semiconductors allows efficient operation of either photovoltaic or light-emitting diodes. We investigate systems where the exciton is marginally stable against charge separation, and show via E-field-dependent time-resolved photoluminescence spectroscopy that excitons that have undergone charge separation at a heterojunction can be efficiently regenerated. This is because the charge transfer produces a geminate electron-hole pair (separation 2.2-3.1nm) which may collapse into an exciplex and then endothermically (E=100-200meV) back-transfer towards the exciton.

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