Exciton/free-carrier plasma in GaN-based quantum wells: Scattering and screening

Details Exciton/free-carrier plasma in GaN-based quantum wells: Scattering and screening Exciton/free-carrier plasma in GaN-based quantum wells: Scattering and screening

2001-11-20

arxiv.org/abs/cond-mat/0111390v1

phys. stat. sol. (a) 183, 87 (2001)

Physics

Condensed Matter

Statistical Mechanics

3 pages, 1 figure

Scientific paper

The degree of ionisation of a two-dimensional electron-hole plasma is
calculated in the low-density (Boltzmann) limit. The electron-hole interaction
is considered for all states: optically active and inactive, bound and unbound.
The theory is applied to exciton/free-carrier plasma in GaN-based quantum wells
at room temperature.

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