Exciton-exciton interaction engineering in coupled GaN quantum dots

Details Exciton-exciton interaction engineering in coupled GaN quantum dots Exciton-exciton interaction engineering in coupled GaN quantum dots

2002-06-06

arxiv.org/abs/cond-mat/0206085v2

Physics

Condensed Matter

Materials Science

3 two-column pages, 3 figures

Scientific paper

10.1063/1.1519353

We present a fully three-dimensional study of the multiexciton optical response of vertically coupled GaN-based quantum dots via a direct-diagonalization approach. The proposed analysis is crucial in understanding the fundamental properties of few-particle/exciton interactions and, more important, may play an essential role in the design/optimization of semiconductor-based quantum information processing schemes. In particular, we focus on the interdot exciton-exciton coupling, key ingredient in recently proposed all-optical quantum processors. Our analysis demonstrates that there is a large window of realistic parameters for which both biexcitonic shift and oscillator strength are compatible with such implementation schemes.

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