Exciton and confinement potential effects on the resonant Raman scattering in quantum dots

Details Exciton and confinement potential effects on the resonant Raman scattering in quantum dots Exciton and confinement potential effects on the resonant Raman scattering in quantum dots

1998-08-06

arxiv.org/abs/cond-mat/9808058v1

Semicond. Sci. Technol. 13 (1998) 871-875

Physics

Condensed Matter

12 pages REVTeX (preprint), 1 table, 3 figures. Subj-clas: Mesoscopic systems

Scientific paper

10.1088/0268-1242/13/8/007

Resonant Raman scattering in semiconductor quantum dots with spherical shape is theoretically investigated. The Frohlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied for the following intermediate electronic state models: (I) Uncorrelated electron-hole pairs in the strong size quantized regime, (II) Wannier-Mott excitons in an infinite potential well, and (III) Excitons in a finite confinement barrier. It is shown that the finite confinement barrier height and the electron-hole correlation determine the absolutes values of the scattering intensities and substantially modify the Raman line shape, even in the strong confinement regime.

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