Excitation Induced Dephasing in Semiconductor Quantum Dots

Details Excitation Induced Dephasing in Semiconductor Quantum Dots Excitation Induced Dephasing in Semiconductor Quantum Dots

2003-10-14

arxiv.org/abs/cond-mat/0310319v2

Physics

Condensed Matter

Materials Science

6 pages, 4 figures. Extensively revised text, two figures changed

Scientific paper

10.1103/PhysRevB.70.235308

A quantum kinetic theory is used to compute excitation induced dephasing in semiconductor quantum dots due to the Coulomb interaction with a continuum of states, such as a quantum well or a wetting layer. It is shown that a frequency dependent broadening together with nonlinear resonance shifts are needed for a microscopic explanation of the excitation induced dephasing in such a system, and that excitation induced dephasing for a quantum-dot excitonic resonance is different from quantum-well and bulk excitons.

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