Excitation gaps in fractional quantum Hall states: An exact diagonalization study

Details Excitation gaps in fractional quantum Hall states: An exact diagonalization study Excitation gaps in fractional quantum Hall states: An exact diagonalization study

2002-02-22

arxiv.org/abs/cond-mat/0202407v3

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

18 pages, 17 figures

Scientific paper

10.1103/PhysRevB.66.075408

We compute energy gaps for spin-polarized fractional quantum Hall states in the lowest Landau level at filling fractions nu=1/3, 2/5,3/7 and 4/9 using exact diagonalization of systems with up to 16 particles and extrapolation to the infinite system-size limit. The gaps calculated for a pure Coulomb interaction and ignoring finite width effects, disorder and LL mixing agree with predictions of composite fermion theory provided the logarithmic corrections to the effective mass are included. This is in contrast with previous estimates, which, as we show, overestimated the gaps at nu=2/5 and 3/7 by around 15%. We also study the reduction of the gaps as a result of the non-zero width of the 2D layer. We show that these effects are accurately accounted for using either Gaussian or z*Gaussian' (zG) trial wavefunctions, which we show are significantly better variational wavefunctions than the Fang-Howard wavefunction. For quantum well parameters typical of heterostructure samples, we find gap reductions of around 20%. The experimental gaps, after accounting heuristically for disorder,are still around 40% smaller than the computed gaps. However, for the case of tetracene layers inmetal-insulator-semiconductor (MIS) devices we find that the measured activation gaps are close to those we compute. We discuss possible reasons why the difference between computed and measured activation gaps is larger in GaAs heterostructures than in MIS devices. Finally, we present new calculations using systems with up to 18 electrons of the gap at nu=5/2 including width corrections.

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