Exchange effects on electron transport through single-electron spin-valve transistors

Details Exchange effects on electron transport through single-electron spin-valve transistors Exchange effects on electron transport through single-electron spin-valve transistors

2006-08-09

arxiv.org/abs/cond-mat/0608217v1

Phys. Rev. B 74, 224406 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

15 pages, 6 figures

Scientific paper

10.1103/PhysRevB.74.224406

We study electron transport through single-electron spin-valve transistors in the presence of non-local exchange between the ferromagnetic leads and the central normal-metal island. The Coulomb interaction is described with the orthodox model for Coulomb blockade and we allow for noncollinear lead magnetization directions. Two distinct exchange mechanisms that have been discussed in the literature are shown to be of comparable strength and are taken into account on equal footing. We present results for the linear conductance as a function of gate voltage and magnetic configuration, and discuss the response of the system to applied magnetic fields.

Affiliated with

Also associated with

No associations

Rating

Exchange effects on electron transport through single-electron spin-valve transistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Exchange effects on electron transport through single-electron spin-valve transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Exchange effects on electron transport through single-electron spin-valve transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-247423