Exchange Biasing of the Ferromagnetic Semiconductor Ga1-xMnxAs

Details Exchange Biasing of the Ferromagnetic Semiconductor Ga1-xMnxAs Exchange Biasing of the Ferromagnetic Semiconductor Ga1-xMnxAs

2003-12-10

arxiv.org/abs/cond-mat/0312259v2

Appl. Phys. Lett. 85, 1556 (2004).

Physics

Condensed Matter

Materials Science

pdf file only; submitted to Applied Physics Letters

Scientific paper

10.1063/1.1787945

We demonstrate the exchange coupling of a ferromagnetic semiconductor (Ga1-xMnxAs) with an overgrown antiferromagnet (MnO). Unlike most conventional exchange biased systems, the blocking temperature of the antiferromagnet (T_B = 48 +- 2 K) and the Curie temperature of the ferromagnet (T_C = 55.1 +- 0.2 K) are comparable. The resulting exchange bias manifests itself as a clear shift in the magnetization hysteresis loop when the bilayer is cooled in the presence of an applied magnetic field and an enhancement of the coercive field.

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