Excess dissipation in a single-electron box: The Sisyphus resistance

Details Excess dissipation in a single-electron box: The Sisyphus resistance Excess dissipation in a single-electron box: The Sisyphus resistance

2009-02-25

arxiv.org/abs/0902.4316v2

Nano Letters, 10(3), 2010, 953-957

Physics

Condensed Matter

Superconductivity

5 pages, 3 figures

Scientific paper

We present measurements of the ac response of a single-electron box (SEB). We apply an rf signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.

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